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[November 2001]
Silicon Carbide Epitaxy Collaboration
Announced 29 October 2001, Okmetic AB and Epigress AB said they were establishing a collaboration in the field of developing advanced SiC epi production process technologies.
In conjunction with this collaboration agreement, Epigress also announced the sale of a VP508 Gas Foil Rotation system to Okmetic. This SiC Hot-Wall CVD System represents the latest development of the Epigress design in combination with the Aixtron patented Gas Foil Rotation principle. The system capacity is flexible and ranges from 3in x 2in to single 3in and 4in wafers.
Okmetic has developed a radically new method for SiC crystal growth, jointly with Linkoping University and ABB Corporate Research. The method is based on the HTCVD technique, enabling, for example, the growth of semi-insulating SiC substrates of very high purity. The first results from devices processed on Okmetic material were presented last year. Okmetic has also started to supply CVD-grown epitaxial layers and has now commenced the industrialisation of its SiC substrate and epitaxy business which is
expected to represent a significant business potential.
ENDS