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[July 2003]
Advances in Silicon Carbide Materials
Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high voltage, high temperature and high frequency applications. So says the Materials Research Society (Warrendale, PA, USA) on publication of its new volume - 'Silicon Carbide 2002 - Materials, Processing and Devices' (MRS Proceedings Series) - which focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies.
The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimisation of implant activation and oxide-SiC interfaces, and developing novel device structures.
This volume brings together the crystal growers, physicists and device experts needed to continue the rapid pace of SiC-based technology. Topics include: epitaxial growth; characterisation/defects; MOS technology;
SiC processing; and devices.
The book (ISBN 1-55899-679-6) is a hardback containing 52 papers in 404 pages. It costs US$103 (in USA) or US$119 (non-USA). To request more details, e-mail the Materials Research Society at: info@mrs.org
web site: www.mrs.org/books/
ENDS