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[February 2005]
New Silicon Carbide Proceedings Volume
The Materials Research Society (Warrendale, PA, USA) has announced the publication of 'Silicon Carbide 2004 - Materials, Processing and Devices'.
Silicon carbide (SiC) is a wide bandgap semiconductor that can operate at temperatures well above 300°C, where silicon cannot perform. In addition, due to a high thermal conductivity equal to that of copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems and the impact of these devices is expected to significantly increase in the next several years.
This proceedings volume documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods for suppressing the degradation, are addressed.
The volume (ISBN: 1-55899-765-2) is available at a cost of US$103 (US$90 for MRS members) in the USA or US$119 outside the USA. It is Volume 815 from the MRS Symposium Proceedings Series.
Website: www.mrs.org/publications/
ENDS